QMAT, Inc.

2424 Walsh Ave
Santa Clara, California 95051 USA

Tel +1 (408) 228-5858

Fax +1 (408) 228-5859

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    OUR TECHNOLOGY

    The company’s new EpiMax™ engineered substrate capabilities will lead to significant cost reduction and quality improvement that will enable the acceleration of LED adoption in micro-LED and HB-LED, critical new growth areas for the industry.  The company also offers a clear path to achieve a cost/efficiency balance for advanced GaN and GaAs based devices that will accelerate more rapid adoption of the technology.  QMAT plans to leverage a strong, defensible and exclusively licensed GaN layer-transfer patent portfolio to establish relationships with world leading optoelectronic and display companies to develop a market leading presence for its transformational technology.  Our innovative processes allow for novel materials such as higher performance GaN and GaAs  growth substrates for electronic applications within the mobile markets. 

    QMAT layer-transfer process sequence - Example of GaN layer-transfer

    The proprietary QMAT layer-transfer process sequence starts by forming a cleave layer below the surface of a specially prepared GaN donor wafer that is both of 4"-8" and high-quality (1).  Special functional layers can also be integrated onto the donor and/or handle wafers to enable unique features and benefits of the resulting engineered substrate. The wafers are then bonded (2) and cleaved (3) along a predetermined cleave plane to release a thin GaN layer onto a support substrate. The engineered substrate can then become an EPI growth substrate for manufacturing LED, micro-LED and power electronic devices.  

    Use of QMAT EpiMax™ substrates within micro-LED manufacturing

    The advantages of utilizing QMAT EpiMax™ substrates as a micro-LED source substrate are numerous:

     

    (1) Shorter MOCVD process time

    The presence of a high-quality GaN layer on the EpiMax™ substrate eliminates the need for a buffer layer required for heteroepitaxial GaN growth on sapphire. This lowers the MOCVD process time by as much as 35-50% and results in a thinner micro-LED device that is better able to be printed.

     

    (2) Design for Testability

    The integration of functional layers can help design for testability of the micro-LED process, a critical step required for low error-rate micro-LED manufacturing.

     

    (3) Design for Printability

    The integration of functional layers can help design for printability of the micro-LED process, another critical step required for low error-rate micro-LED manufacturing. Certain integrated layers can help release the micro-LEDs as a full layer either by a chemical lift-off or laser lift-off process. Other integrated layers can allow individual micro-LED release by a selective laser lift-off process.

    (4) Better Products

    The QMAT higher quality semiconductor material of the QMAT EpiMax™ substrate can improve final product quality and functionality in manufacturing (higher yield) and in the final product specifications (better display uniformity, higher efficiency, longer battery life).