QMAT, Inc., established in December 2012 and located in Silicon Valley, California, is a privately held technology innovator focusing on developing game changing equipment and material transfer technologies to enable the manufacture of high quality and high performance wide bandgap (WBG) semiconductor growth substrates. QMAT’s patented technologies allow it to synthesize new WBG growth templates at quality levels and substrate sizes that were previously unavailable. Thin high-quality GaN or GaAs EPI-layers on conductive or insulating base substrates from 2” to 12” in diameter are a few examples made possible using QMAT processes.


QMAT plans to leverage a strong, defensible WBG engineered substrate patent portfolio to become one of the premier players in the rapidly growing, multi-billion dollar WBG industry with its disruptive substrate technologies, which enables an unmatched cost, performance, and application scale.


Markets served include light emitting diodes (LEDs), advanced Micro-LED technologies for portable/large-area displays or VR/AR applications, RF electronics, digital semiconductors, power electronics and other emerging high performance and energy efficient applications

QMAT Headquarters, Santa Clara, California